| 摘要 |
<p>PURPOSE:To lessen the formation of chips in manhour and to protect the chips against chipping caused by handling after a laser bar is divided into the chips so as to improve them in yield by a method wherein semiconductor or U-shaped grooves are provided to a substrate in a direction vertical to the light emitting plane. CONSTITUTION:When a groove is provided to an indium phosphide substrate, a sulfuric acid-hydrogen peroxide etchant small in selectivity to crystal orientation is used to provide a semicircular or a U-shaped groove 1 to a corresponding part between chips. Cleavage is carried out through a known method, a nonreflective film is formed on the light emitting surface of a rectangular laser bar B obtained by cleaving, then adhesive tapes 6a and 6b are pasted on both the sides of the bar B for preventing the chips from scattering and being damaged when the bar B are divided into chips, and the laser bar B is divided into chips 8 by breaking with a roller 7. By this setup, a DFB laser diode chip 8 provided with a chamber groove 9 of a recess with a curved surface formed vertical to a light emitting plane 3 can be obtained.</p> |
