| 摘要 |
<p>The invention provides a method for growth of single crystals from the melt by directional solidification in vertical bottom seeded crucibles. The crucible (18) confining the melt (12) is insulated radially and from above (19). The heat is supplied to the melt by a heater submerged in the melt (14) or an auxiliary heater (16) above the crucible containing the melt. A small portion of the melt (22) is enclosed between the submerged heater and the growing crystal (24). The confined melt in this region is thermally stratified and therefore stagnant.</p> |
