| 摘要 |
Comprises spinning a film of spin-on-glass (SOG) over a semiconductor substrate, precuring the film of SOG at an elevated temperature sufficient to remove the bulk of solvent and curing the film of SOG in a plasma in a plasma reactor of a type exhibiting a self-biased RF discharge adjacent to the SOG for a period of time sufficient to exclude the bulk of SiOH, organic volatiles and H2O from the layer. |
