| 摘要 |
<p>PURPOSE:To stably produce the MIM element which is free from fluctuations with good reproducibility by introducing either one or both of nitrogen or carbon into an insulator after formation of the insulator. CONSTITUTION:The anodic oxidation method of tantalum which is a metal 2 in a citric acid soln. is executed in order to obtain the insulator 3 and thereafter, the nitrogen is implanted by an ion implantation method onto the surface of the insulator 3 to form the insulator layer 5 implanted with the nitrogen. The implantation depth of the nitrogen of this time is so determined as not to exceed the thickness of the insulator 3. The effect is similar even if the carbon or both of the nitrogen and the carbon are implanted in place of the nitrogen. The exact control of the implantation depth of the nitrogen and the injection rate with the good reproducibility is possible if the ion implantation method is used and, therefore, the exact control of the current-voltage characteristics of the MIM element with good reproducibility is possible. The influence by the end part of the metal is eliminated in this way and the production of the MIM element having no fluctuations with the good reproducibility is possible.</p> |
