发明名称 |
Semiconductor device. |
摘要 |
The invention concerns a semiconductor device comprising a semiconductor chip (15) having a reception circuit for removing a direct-current component of a reception signal by the utilization of a capacitor and a metal film formed on the back side thereof; a first conductive pattern (12) formed on an electrically insulating substrate (11) and set at a common reference voltage for device; and a second conductive pattern (13) formed on said substrate (11) to be electrically insulated from said first conductive pattern (12), fixed to said metal film, and electrically connected to said capacitor. This arrangement results in a high receiving sensitivity and a wide receiving band of the reception circuit, because there is almost no floating capacitance present in the capacitor. |
申请公布号 |
EP0415318(A2) |
申请公布日期 |
1991.03.06 |
申请号 |
EP19900116385 |
申请日期 |
1990.08.27 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LIMITED |
发明人 |
SHIGA, NOBUO, C/O YOKOHAMA WORKS |
分类号 |
H01L21/3205;H01L23/52;H01L23/64;H01L27/01;H01L31/10 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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