| 摘要 |
PURPOSE:To enable sure removal of a source of production of resist particles from a semiconductor wafer in a posterior process and thereby to improve a yield by removing a resist in the peripheral part of the wafer by jetting a reaction gas thereto while rotating the wafer. CONSTITUTION:While a semiconductor wafer 3 is fixed by suction to a spin chuck 2 and rotated, an oxygen gas containing ozone or a gas prepared by making an inactive gas not reactive with the ozone, such as N2. Ar or Ne, contain the ozone is jetted from a gas jetting nozzle 5 provided at a position above the peripheral part of the wafer 3. When an ashing gas is heated, the ozone is resolved and an oxygen atom radical is produced in a large amount therefrom. This oxygen atom radical reacts with a resist film 8 in the peripheral part and thereby an ashing processing is conducted. According to this method, it is possible to surely remove the resist film 8 in the peripheral part of the wafer and thereby to remove a source of production of resist powder in the peripheral part, and thus yield is improved. |
