| 摘要 |
PURPOSE:To reduce the length of a coplaner line and to realize an MMIC with a small chip area by providing the coplaner line covered with a dielectric substance. CONSTITUTION:A transistor(TR) 2 such as a MESFET or a MEMT or the like and a MIM capacitor 3 are formed on a semi-insulating GaAs substrate 1 and a coplaner line is constituted by a ground conductor 4 and a center conductor 5. The coplaner line is formed by, e.g. vapor-depositting a Ti/Au film, patterning the Ti/Au film, applying Au plating to the Ti/Au film to reduce the loss and an upper electrode of the MIM capacitor 3 is formed at the same time. A polyimide 10 is formed to the entire face of a monolithic microwave integrated circuit(MMIC) and the ground conductor 4, the center conductor 5 and a gap 11 formed between the conductors 4, 5, are covered by the polyimide 10. Thus, the length of the coplaner line is reduced and the MMIC is miniaturized. |
