Semiconductor memory device having stacked capacitor and method of producing the same.

摘要

A semiconductor memory device includes a substrate (1), a transfer transistor formed on the substrate and including drain and source regions (61, 62; 5), and a charge storage capacitor electrically coupled to one of the drain and source regions of the transfer transistor. The charge storage capacitor has a conductive base layer (151) which is electrically coupled to the one of the drain and source regions (61, 62; 5) of the transfer transistor, at least one conductive side wall (22) connected to one end of the base layer, a plurality of fin-shaped parts (152, 153) which extend from the side wall in a plurality of levels generally parallel to the base layer, a dielectric layer (24) which covers exposed surfaces of the base layer, the side wall and the fin-shaped parts, and a conductor layer (25) which is formed on the dielectric layer to form an opposed electrode of the charge storage capacitor. The fin-shaped parts and the side wall form a storage electrode of the charge storage capacitor of a DRAM.