发明名称 |
Wiring contact portion of a semiconductor device and method for manufacturing the same. |
摘要 |
<p>The invention provides a device having a semiconductor layer (11), an insulating layer (13) on the semiconductor layer (11), including a discontinuity therein, a monocrystalline silicon layer (20) on a portion of the semiconductor layer (11) defined by the discontinuity, a non-monocrystalline silicon layer (21) on the monocrystalline silicon layer (20), and a wiring layer (22) on the non-monocrystalline silicon layer (21).</p> |
申请公布号 |
EP0415537(A2) |
申请公布日期 |
1991.03.06 |
申请号 |
EP19900307826 |
申请日期 |
1990.07.17 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SAMATA, SHUICHI, C/O INTELLECTUAL PROPERTY DIV.;MATSUSHITA, YOSHIAKI, C/O INTELLECTUAL PROPERTY DI |
分类号 |
H01L21/28;H01L21/285;H01L23/532;H01L29/43 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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