| 摘要 |
PURPOSE:To reduce current leak to parts other than a target double heterostructure by forming an insulating layer or a high resistance layer between respectively double heterostructures. CONSTITUTION:After GaAs single crystalline grains 7 are selectively formed on a nucleus forming surface 1, a clad layer 3a, an active layer 4a, a clad layer 3b, a high resistance layer 8, a clad layer 3c, an active layer 4b, and a clad layer 3d are sequentially formed. Then, the crystalline surface is flattened, and the sequentially formed layers are exposed. Electrode layers 5 are formed on the exposed clad layers 3a-3d of the single crystalline layer, and electrode wiring 6a-6d is made between the layers 5. Since a high resistance layer 8 is provided between the double hetero structures in this manner, when current is injected into the desired structure, current leak to the adjacent structures can be prevented. |
