| 摘要 |
PURPOSE:To prevent intrusion of a high melting-point metal into a polycrystalline silicon layer, reaction of the high melting-point metal and formation of an silicide by forming the nitride film of the stable and conductive high melting-point metal onto the polycrystalline silicon layer, which is doped with an impurity, and forming the high melting-point metal onto the nitride film. CONSTITUTION:A field oxide film 2 and a gate insulating film 3 are formed onto a P-type Si single crystal substrate 1. A polycrystalline silicon layer 4 is shaped onto the field oxide film 3 and the gate insulating film 3, and N<+> diffusion is conducted through thermal diffusion. A titanium nitride layer 8 is formed onto the layer 4, a high melting-point metallic layer 5 is shaped onto the layer 8, and others are removed through etching while leaving an electrode and a wiring region required. N<+> diffusion is performed through ion implantation, and a source and a drain 6 are formed. An SiO2 film 7 is shaped onto the source and the drain. An impurity in the source and the drain 6 is activated and the SiO2 film 7 is annealed through heat treatment at a high temperature in a nitrogen atmosphere. Since there is the titanium nitride film between the polycrystalline silicon layer and the high melting-point metallic layer at that time, both the polycrystalline silicon layer and the high melting-point metallic layer are not reacted. |
