| 摘要 |
<p>PURPOSE:To improve sensitivity, a mechanical strength, a strain resistance characteristic and a resistance temperature characteristic by specifying composition rates of Fe, oxygen and metals or semiconductors and a film thickness and by forming a thin film by a physical evaporation method or a chemical evaporation method. CONSTITUTION:The content of Fe is 60 to 98 atom % and the content of oxygen is in the range of 2 to 30 atom % or preferably 15 to 25%. As to metals, Al, titanium, tantalum, zirconium, indium, etc., are used. As for semiconductors, Si, germanium, boron, etc., are used. The contents of the metals and the semiconductors are preferably in the range of 0 to 10atom%. Excellent properties cannot be obtained unless Fe, oxygen and the metals or the semiconductors are not distributed uniformly substantially in the order of microns or less. A film thickness is 0.01mum or above and preferably 10mum or below so as to prevent breakdown of a film due to an internal stress. For forming the thin film, any of an ion plating method, a sputtering method, an evaporation method and a CVD method or a CVD method such as a plasma CVD method may be used.</p> |
