| 发明名称 |
Hypoeutectic ohmic contact to N-type gallium arsenide with diffusion barrier |
| 摘要 |
A hypoeutectic ohmic contact to gallium arsenide comprising a refractory metal layer is provided which reduces the outdiffusion of gallium and arsenic which would otherwise be seen as impurities at the outer surface of the ohmic contact.
|
| 申请公布号 |
US4998158(A) |
申请公布日期 |
1991.03.05 |
| 申请号 |
US19870056076 |
申请日期 |
1987.06.01 |
| 申请人 |
MOTOROLA, INC. |
发明人 |
JOHNSON, KARL J.;WEITZEL, CHARLES E. |
| 分类号 |
H01L29/45 |
主分类号 |
H01L29/45 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
