发明名称 |
Process for forming a self-aligned FET having a T-shaped gate structure |
摘要 |
A process for formation of a GaAs MESFET for use in digital IC and MMIC is disclosed, the MESFET having a high operating speed and low noise characteristics. A multilayer resist comprising a nitride film, a photo resist, a titanium deposition layer, and a SiO layer made by SOG (spin-on-glass) is formed, and a gate which is formed in the length of 0.7-1 mu m by applying the photo transfer method is transcribed in the length of 0.3-0.5 mu m. The pattern of the gate is transcribed by etching it down to GaAs, and the place for the positioning of the T-shaped gate is defined by depositing tungsten silicide and by side-etching the photo resist. The T-shaped gate is manufactured by electroplating gold, and by lifting off the rest of the portions. The source and drain are then formed in a self-aligned manner by ion-implanting to a high concentration, and then a heat treatment is carried out to make active. A resistant contact is then formed by applying the photo transfer method and an etching, and is completed by depositing AuGe/Ni and by carrying out an alloy-treatment. A conventional metallization is then performed to complete the self-aligned gaAs MESFET having a T-shaped gate.
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申请公布号 |
US4997778(A) |
申请公布日期 |
1991.03.05 |
申请号 |
US19890402607 |
申请日期 |
1989.09.05 |
申请人 |
KOREA ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
SIM, KYUNHWAN;CHOI, YUNGKYU;YANG, CHUNUK;LEE, CHINHEE;KANG, CHINYUNG |
分类号 |
H01L29/812;H01L21/285;H01L21/338;H01L29/78 |
主分类号 |
H01L29/812 |
代理机构 |
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地址 |
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