Aluminum contact etch mask and etchstop for tungsten etchback
摘要
A method for forming CVD tungsten contacts in a planarized semiconductor body. The method utilizes aluminum as an etch mask and etch stop to prevent etching of underlying layers during contact formation.
申请公布号
US4997789(A)
申请公布日期
1991.03.05
申请号
US19880265162
申请日期
1988.10.31
申请人
TEXAS INSTRUMENTS INCORPORATED
发明人
KELLER, STEPHEN A.;SPRY, PIPER A.;ADAMS, MARTHA S.;HARPER, RALPH G.
