| 摘要 |
<p>PURPOSE:To improve the reproducibility, production efficiency and quality of an epitaxial film by charging a molecular-beam source material highly purified in an exclusive device or a molecular-beam source feeder into a molecular-beam source crucible of a reaction chamber without the material being brought into contact with air. CONSTITUTION:A discharge port 21 is opened, a treating crucible 15 charged with a molecular-beam source material 14 is set in a treating chamber 16, a vacuum valve 20 is opened to evacuate the chamber 16 to 10<-9>Torr, and then the material 14 is melted by a heater 17b. A valve 19a is opened to introduce gaseous H2 into the chamber 16, the valve 20 is simultaneously closed, a valve 19b is closed when the gaseous H2 pressure in the chamber 16 is increased above atmospheric pressure, the material 14 is heat-treated, and then the material 14 is cooled, solidified and highly purified. The valves 19a and 19b are then closed, the valve 20 is opened to evacuate the chamber 16 to the order of 10<-9>Torr, and then a molecular-beam source transter gate valve 7b is opened. An external magnet 22c is operated to insert the crucible 15 into a molecular-beam source crucible 1, a heater 8 is energized to heat the material 14 in the crucible 1 above its melting point, and the liquefied material 14 is dropped into the crucible 1 from a small hole 15a provided at the bottom of the crucible 15.</p> |
