| 摘要 |
<p>PURPOSE:To obtain a short channel by a method wherein an Si3N4 film pattern with a part of its periphery protruding like a hood is formed on a gate electrode pattern with a thermally oxidized film interposed while the pattern is used as a mask to inject impure ions to a channel region and the thermally oxidized film and the Si3N4 film are etched to be removed so that impure ions are injected into a source region. CONSTITUTION:After a highly deep concentrated part 2 of the same impurities as a channel region is formed on an si substrate 1 by selective diffusion, a thermally oxidized film 3, a polycrystal Si film 4, a thermally oxidized film 5 and an Si3N4 film 6 by CVD method are laminated and adhered on the surface of the substrate 1. Then the films 6, 5, 4 are etched by isotropic plasma etching and the film 3 is etched by hydrofluoric acid to form a gate electrode 14 wherein the film 6 with a part of its periphery protruding remains over the film 5 and a gate oxide film 13. Then after with the film 6 pattern used as a mask, impure ions are injected into a channel region 7 and the films 6, 5 are etched to be removed, a resist pattern 8 is used as a mask to inject impure ions into a source region 9.</p> |
