OHMIC ELECTRODE MATERIAL OF N TYPE 3-5 GROUP COMPOUND SEMICONDUCTOR AND FORMATION OF OHMIC ELECTRODE THEREWITH

摘要

PURPOSE:To improve manufacturing yield and reliability, by using Ge-Ni-Ag for an ohmic electrode material of an n type III-V group compound semiconductor. CONSTITUTION:An n type GaAs layer 2 an p type GaAs layer 3 are epitaxial- grown on an n type GaAs substrate 1, and after the substrate 1 is polished to a mirror surface, the base body is heated to 100-450 deg.C to evaporation-form Ge, Ni and Ag on the surface thereof. Next, a Ge-Ni-Ag electrode 5 (6 represents for a p type electrode) is formed by heat treatment at the temperature of 450-550 deg.C in inactive or reducible atmosphere or in vacuum. Thus, element manufacturing yield and reliability improve with the reduction of manufacturing cost.