| 摘要 |
PURPOSE:To clean the surface by previously forming a SiO2 film having high purity on the surface of Si by means of a heating oven, injecting Si onto the surface of a film under vacuum and chemically reacting Si with SiO2. CONSTITUTION:The SiO2 film having high purity is formed onto the surfaces of Si with the minuteness of not less than several dozen Angstrom thickness through treatment at a high temperature in O2, and used as a pollution preventive film. A sample is heated at the critical temperature or higher under vacuum, and Si atoms are injected onto the surface of the SiO2 film. In this case, the SiO2 film is etched gradually, and lastly removed completely. The moment cannot be decided from the outside of a vacuum device, but all Si atoms injected after the clean surfaces of Si are exposed once adhere on the surfaces of Si, and the clean surfaces of Si are formed again. |
