| 摘要 |
PURPOSE:To set an electric field substantially perpendicular to a light incident direction and to eliminate weakening of the electric field even if the length of an optical path is increased by burying an I-type amorphous silicon layer between pyramidal P-type polycrystalline layers by using the pyramidal layers. CONSTITUTION:A transparent conductive film 2 having strong oxygen etching resistance of SnO2 formed on a transparent insulting board 1 made of glass, etc., is provided. A pyramidal P-type polycrystalline layer 3 is selectively formed on the film 2, an I-type amorphous silicon layer 4, an N-type amorphous silicon layer 5 and a rear surface metal electrode 6 are sequentially laminated on the film 2 and the layer 3, and the layer 3 is buried. Thus, an optical path is increased in length, light absorption amount is increased, and an electric field becomes substantially perpendicular as compared with a light incident direction. Thus, even if the length of the optical path is increased, the electric field is not weakened, thereby improving characteristics of a solar cell. |
