| 摘要 |
<p>PURPOSE:To improve uniform element characteristics and etching property by forming the film of ITO (Indium Tin Oxide) to constitute the upper electrode of Metal-Insulator-Metal (MIM) elements at the temp. lower than 300 deg.C and subjecting the films to a heat-treatment in the atm. air or inert atmosphere kept at 300 to 450 deg.C after the film formation. CONSTITUTION:Ta is formed by sputtering method on a glass substrate 1 and the lower electrodes 2 of the MIM elements are formed by photoetching. Ta2O5 as an insulating layer 3 which is a nonlinear resistance element is then formed on the surface of the Ta by a anodic oxidation method. The ITO is formed at <=300 deg.C substrate temp. by a sputtering method and is subjected to the heat- treatment at 300 to 400 deg.C in the atm. after the film formation, following which this film is patterned by the photoetching to simultaneously form the upper electrodes 4 of the MIM elements and the picture element electrodes 5 for liquid crystal driving integrated therewith. The MIM elements having the uniform characteristics and the ITO film having the good etching property are obtd. in this way.</p> |
