| 摘要 |
<p>PURPOSE:To shorten processes by forming just one layer of a 1st metallic electrode layer and making common use of a light shielding layer and an electrode layer of the thin-film diodes. CONSTITUTION:The 1st metallic electrode layer is formed over the entire surface on a substrate. The 1st metallic electrode layer 14 is patterned by using a 1st mask 15 and a semiconductor layer 16 and a 2nd metallic electrode layer 18 are successively formed over the entire surface. The semiconductor layer and the 2nd metallic electrode layer 14 are simultaneously patterned by using a 2nd mask 19. A transparent electrode layer 22 is in succession formed and after the transparent electrode layer 22 is patterned by using a 3rd mask 23, the semiconductor layer in the apertures of the 3rd mask 23 and the 2nd metallic electrode layer 18 are patterned. The need for the 2nd time of the etching process is eliminated in this way and the processes are shortened.</p> |
