| 摘要 |
<p>PURPOSE:To prevent the change in the properties of the surface of a substrate and to suppress the leak current on the surface of the substrate by keeping the substrate surface coated with a 1st electrode film at the time of etching a semiconductor layer. CONSTITUTION:The 1st electrode film 6 and the semiconductor layer 3 are successively formed over the entire surface on the substrate 1 and this semiconductor layer 3 is patterned by using a 1st photoresist 10, by which diode parts 13 consisting of the semiconductor layer are formed. The 1st electrode film 6 is then patterned by using a 2nd photoresist 11 to form a 1st electrode 2. The overhanging parts 5 from the 1st electrodes 2 are formed in the diode parts 13 and thereafter, the 2nd electrode film 4 is formed over the entire surface. The 2nd electrode film 4 is patterned by using a 3rd photoresist 12 to form 2nd electrodes 4. The change in the properties of the substrate 1 surface is prevented in this way and the leak current on the substrate surface is lessened.</p> |
