| 摘要 |
<p>A laminated silicon oxide film capacitor comprising a conductive or semiconductive silicon substrate (31, 41) and, formed on the substrate surface, at least one laminated film comprising a silicon oxide layer (33, 43) and an electrode layer (32, 44) laminated one on the other, and electrodes (32A, 32B, 32C, 46A, 46B).</p> |
