发明名称 Multilayer interconnection substrate and semiconductor integrated circuit device using the same.
摘要 <p>A multilayer interconnection substrate (4) including signal layers (9), power supply layers (10), insulating layers (17) for electrically insulating the layers, and interconnecting paths (11,12,13,14). The signal layers, the power supply layers, and the insulating layers are superposed. Component connection terminals are mounted on a component mounting surface of the multilayer interconnection substrate for connecting to components. External connection terminals are mounted to another surface of the multilayer interconnection substrate. At least one power supply matching layer (8) is layered above both the signal layers and the power supply layers through a insulating layer and close to the component mounting surface. The power supply matching layer corresponds in voltage to a component to be mounted to the component mounting surface. The power supply matching layer is connected to corresponding component power supply terminals, corresponding power supply layers, and corresponding external power supply terminals through the interconnecting paths.</p>
申请公布号 EP0414204(A2) 申请公布日期 1991.02.27
申请号 EP19900115984 申请日期 1990.08.21
申请人 HITACHI, LTD. 发明人 IDEI, AKIO;HORITA, YOSHIAKI
分类号 H01R43/00;H01L23/50;H01L23/538;H01L25/065;H05K3/46 主分类号 H01R43/00
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