| 发明名称 |
Method for forming bipolar transistor in conjunction with complementary metal oxide semiconductor transistors. |
| 摘要 |
<p>The described embodiments of the present invention provide a method and structure for incorporating a bipolar transistor into a complementary metal oxide semiconductor integrated circuit. The bipolar transistor is formed using a minimum of additional steps above those required for forming the complementary MOS integrated circuitry.</p> |
| 申请公布号 |
EP0414013(A2) |
申请公布日期 |
1991.02.27 |
| 申请号 |
EP19900114950 |
申请日期 |
1990.08.03 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
EKLUND, ROBERT H.;HAVEMANN, ROBERT H. |
| 分类号 |
H01L29/73;H01L21/331;H01L21/74;H01L21/762;H01L21/8222;H01L21/8248;H01L21/8249;H01L27/06;H01L29/732 |
主分类号 |
H01L29/73 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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