FORMATION OF P-TYPE SILICON CARBIDE

摘要

PURPOSE:To form p-type SiC on n-type SiC by a simple process without enlarging a device by laminating a metallic film which reacts intensively with oxygen and an aluminum film thereon on an n-type silicon carbide and by thereafter performing heat treatment for the lamination substrate. CONSTITUTION:An n-type SiC substrate 1 is prepared; an n-type SiC layer 2 is formed by epitaxial growth on one main surface 1a thereof; and a Ti film 3 and an Al film 4 are laminated successively on the n-type SiC layer 2. The lamination substrate is heat-treated in an inert gas of 900 to 1000 deg.C such as Ar atmosphere to allow Al in the Al film 4 to pass through the Ti film 3 and to diffuse inside the n-type SiC layer 2; a p-type SiC layer 5 is thereby formed. An Ni film 6 and an Au film 7 perform ohmic contact for the n-type SiC substrate 1 to become an n-type electrode 8. Accordingly, an SiC semiconductor can be manufactured at a low cost without requiring enlargement and complication of a crystal growth device.