| 摘要 |
<p>PURPOSE:To obtain a MIM (metal-insulator-metal) element having high display quality by etching the surface of a lower layer, then anodizing the same, thereby forming an insulator. CONSTITUTION:Ta which is the lower layer metal 6 of the MIM element is formed over the entire surface or this Ta is patterned by etching. After that the surface of the Ta is etched by a reactive ion etching soln. or etching soln. contg. F or etching soln. contg. NaOH. A deteriorated layer 7 of the Ta surface is removed in such a manner. The nonlinearity of the current-voltage characteristics of the MIM element is improved and the fluctuation in the current-voltage characteristics between the elements is decreased. The electric characteristics of the element are improved and the uniformization thereof is attained. The MIM element having the high display quality is thus obtd.</p> |
