| 摘要 |
PURPOSE:To quickly correct a wiring layer by a method wherein the wiring layer is constituted in such a way that the wiring layer can be corrected only in a wiring layer in an upper layer. CONSTITUTION:One part of a wiring which connects an output terminal 101 of a gate G1 to an input terminal 102 of a gate G2 and one part of a wiring which connected an input terminal 103 of the gate G2 to an output terminal 104 of a gate G3 are passed respectively through a wiring layer S4 in a fourth layer; one part of a wiring which is guided from the output terminal 101 of the gate G1 to another gate is passed through a part A inside a wiring layer S5 in a fifth layer. When a semiconductor device is changed, i.e., when the wiring guided from the output terminal 101 of the gate G1 to another gate and the wiring connecting the output terminal 103 of the gate G2 to the output terminal 104 of the gate G3 are cut respectively and the output terminal 104 of the gate G3 is connected to the part A inside the wiring layer S5, the wiring may be cut and connected only in the wiring layers S4, S5 in the fourth and fifth layers in the upper layers. Thereby, the wiring layers can be corrected in a short time. |
