| 摘要 |
PURPOSE:To increase the area of a storage electrode, and to increase a storage charge amount by once forming a polysilicon electrode with a photoresistor as a mask, then depositing polysilicon on a whole surface, thereafter anisotropically etching the whole surface, and allowing the polysilicon of the controlled thickness to remain at a step. CONSTITUTION:A first polysilicon 6 is dry etched with photoresistor 12 as a mask, a second polysilicon 7 is again deposited on a whole surface, the polysilicon 7 is further anisotropically etched on the whole surface, and the polysilicon 7 is allowed to remain at the step of the polysilicon 6 thereby to increase the plane area of polysilicon charge storage electrode. Accordingly, the surface area of the charge storage electrode polysilicon can be increased by the step remainder of the polysilicon or silicide. Thus, storage capacity of a semiconductor memory can be increased. |
