发明名称 |
METHOD OF FORMING RESIST MICROPATTERN |
摘要 |
<p>A resist pattern is formed on a substrate by forming a resist on a substrate and radiating an energy beam carrying predetermined pattern information onto the resist, thereby forming a recessed pattern in a surface portion of the resist so as not to extend through the resist. A flat mask layer is formed on the resist including the recessed pattern. The mask layer is uniformly etched along a direction of thickness thereof until at least a surface of the resist is exposed to allow the mask layer to remain on at least a bottom of the recessed pattern, thereby forming a mask pattern comprising the remaining residual mask layer. Finally, the resist is etched by using the mask pattern as an etching mask.</p> |
申请公布号 |
EP0158357(B1) |
申请公布日期 |
1991.02.27 |
申请号 |
EP19850104417 |
申请日期 |
1985.04.11 |
申请人 |
NIPPON TELEGRAPH AND TELEPHONE CORPORATION |
发明人 |
MATSUDA, TADAHITO;HARADA, KATSUHIRO;MORIYA, SHIGERU;ISHII, TETSUYOSHI |
分类号 |
G03F7/00;G03F7/40 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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