MOSFET depletion device.

摘要

A p-channel depletion device (10) in a MOSFET is formed and preferably comprises a silicon substrate (12), an N-well region (14), P+ source (16) and drain (18) regions, and a polysilicon gate (20) which has been appropriately doped to be of a P- conductivity type. The resulting structure performs analogously to a depletion device formed in accordance with conventional methods wherein a depletion mask and implant are utilized, and is characterized by having a threshold voltage of approximately +250 millivolts.