| 摘要 |
<p>PURPOSE:To suppress the leak current on the surface of a substrate, the leak current by an element shape and the leak current by the lower resistance of a semiconductor layer by etching just a part of a semiconductor layer in such a manner that the semiconductor layer makes self-alignment to a 2nd electrode. CONSTITUTION:The 1st electrode film is formed over the entire surface on the substrate and this electrode film is patterned by using a 1st photoresist 5, by which the 1st electrodes 2 are formed. The semiconductor layer is then formed over the entire surface. This semiconductor layer is patterned by using a 2nd photoresist 6 to form diode parts 3 consisting of the semiconductor layer. The 2nd electrode film is formed over the entire surface and the 2nd electrode film is patterned by using a 3rd photoresist 7 to form 2nd electrodes 4; thereafter, a part of the thickness of the semiconductor layer of the diode parts 3 is etched by using a 3rd photoresist 7. The etching conditions can, therefore, be set at the conditions under which the roughening of the substrate 1 surface does not arise. The change in the properties of the substrate 1 surface is consequently obviated. The leak current on the substrate surface is lessened in this way.</p> |
