| 摘要 |
PURPOSE:To process an integrated circuit fine and to enhance reliability by executing an alignment operation after a metal layer at the upper part of a target pattern has been removed. CONSTITUTION:A metal layer 3a is situated at an upper layer of a target pattern 1. When an exposure operation to pattern the metal layer 3a is executed, the metal layer 3a at the upper part of the target pattern 1 is removed before the exposure operation; after that, an exposure mask is aligned with the target pattern 1 and an exposure operation of a resist pattern is executed. When the metal layer 3a is removed, the target pattern 1 which has been hidden under the metal layer 3a is exposed directly, and an influence by swells 17, of the metal layer, which have been produced at edge parts of the target pattern 1 is not caused at all. Thereby, the exposure mask can be aligned with extremely high accuracy and with good reproducibility. |
