| 摘要 |
A microwave plasma chemical vapor deposition apparatus for continuously forming a functional deposited film on a substrate, comprising a substantially enclosed film forming chamber containing means for holding said substrate, said film forming chamber being provided with means for feeding a film-forming raw material gas into said film forming space, said film forming chamber being provided with a microwave introducing window connected to a microwave power source and means for evacuating the film forming space, said film forming chamber being provided with an etching chamber for cleaning said microwave introducing window with an etching gas, said etching chamber having an etching space and being provided with means for feeding an etching raw material gas into said etching space, said etching chamber being provided with means for applying an activation energy into said etching space to excite said etching raw material gas to be said etching gas, characterized in that said microwave introducing window comprises a plurality of concentric cylindrical microwave transmitting windows; one of said plurality of microwave transmitting windows to be exposed in the film forming space is made movable between the film forming chamber and the etching chamber such that the microwave transmitting window previously used in the film forming chamber is cleaned by etching off the film deposited on said microwave transmitting window with the etching gas in the etching chamber while film forming operation being performed in the film forming chamber.
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