| 摘要 |
1,198,559. Semi-conductor devices. TOKYO SHIBAURA ELECTRIC CO. Ltd. 24 Dec., 1968 [28 Dec., 1967], No. 61231/68. Heading H1K. A semi-conductor device is formed in a single crystal substrate the passivated top surface of which lies in the {311} plane or within 5 degrees thereof. Embodiments described are an MOS diode (Al: SiO 2 : Si: A1), an SiO 2 or Si IGFET, and an SiO 2 -passivated planar transistor. Considerable data is quoted to show the effect of the use of surfaces in various lattice planes on epitaxial growth rate, etching rate, resistance to thermal etching, and on the density and mobility of carriers under the passivation. |
