发明名称 BI-CMOS INVERTER CIRCUIT
摘要 The inverter circuit for improving a transfer charactristics responding to an output of the bipolar transistor and having a constant output voltage of the inverter comprises first P.N MOS (P3) (N5) reverse-driving each other in accordance with the level state of the input stage; second P.N MOS (P4) (N6), their gates being connected to the gates of the first P.N MOS; bipolar transistors (Q5)(Q6) the base of the transistor (Q5) being connected to the drain of the first P MOS (P3); and an output stage (out) connected to the drains of the second P.N MOS (P4)(N6) and a node between the emiter of the bipolar transistor (Q5) and the collector of the bipolar transistor (Q6) commonly.
申请公布号 KR910001097(B1) 申请公布日期 1991.02.23
申请号 KR19870015198 申请日期 1987.12.29
申请人 SAM SUNG ELECTRONICS CO., LTD. 发明人 SHIN KI-HO;KIM YOUNG-SOO
分类号 H02M1/08;H02M1/32;H03K19/00;(IPC1-7):H03K19/00 主分类号 H02M1/08
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