发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 PURPOSE:To secure adequate ohmic property by depositing an Au-Sb alloy layer to the rear surface of a pellet on which electronic circuits are formed, bonding said pellet to a lead, bonding an alloy layer to a silver paste layer which is formed on the lead, and finishing the bonding in this way. CONSTITUTION:A collector C which is formed at the lower layer of a base B is formed in an N type. The collector C is led out through the rear of the pellet 2. An N<+> layer 4 is formed at the lower layer part of the collector C. A gold-antimony alloy layer (Au-Sb alloy layer) 5 as an alloy layer wherein metal having small electric resistance and a group V element are components is deposited on the outer surface of the N<+> layer 4 by using a vapor deposition method. The alloy is formed by heat treatment at 385 deg.C. The other ends of wires 6 and 6 are bonded to an emitter electrode Ea and a base electrode Ba, respectively. An Ag paste layer 10 is formed at the tip part of a central lead 9 as a conductor. The pellet 2 is bonded to the tip part of the lead 9 by connecting the Au-Sb alloy layer 5 to the Ag paste layer 10.
申请公布号 JPH0341742(A) 申请公布日期 1991.02.22
申请号 JP19890177356 申请日期 1989.07.10
申请人 HITACHI LTD 发明人 HAYASHI YUKIO;INOMATA FUJIHIKO;KANZAWA KOJI;KANBAYASHI KAZUO
分类号 H01L21/52 主分类号 H01L21/52
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