| 摘要 |
<p>PURPOSE:To improve the uniformity of a substrate temp. at the time of formation of an ITO film and to obtain the MIM element having good characteristics by forming a metallic film on the rear surface of a substrate and forming an upper electrode. CONSTITUTION:A Ta film 2 on the substrate 1 is patterned to form the lower electrode 4 and wiring of the MIM element. Ta2O5 if formed as a nonlinear resistance film 5 on the surface of the Ta film 2. Further, aluminum is formed as the metallic film 6 by a sputtering method on the rear surface of the substrate 1. The ITO film 9 is then formed. This ITO film 9 is patterned by photoetching using an etching liquid, by which the upper electrode 7 of the MIM element and an electrode 8 for driving a liquid crystal are simultaneously formed. The substrate temp. distribution depending on the patterns on the device and the MIM element substrate at the time of formation of the ITO 9 is decreased to 1/2 to 1/10 in this way. The MIM element having the good voltage- current characteristics is thus obtd.</p> |
