| 摘要 |
PURPOSE:To improve sensitivity, resolution and dry etching resistance by forming the resist of an alkaline soluble high polymer compd., a specific compd. or a compd. which generates an acid by receiving the irradiation of radiations. CONSTITUTION:This resist consists of the alkaline soluble high polymer, the compd. expressed by formula I or the compd. expressed by formula II and the compd. which generates the acid by receiving the irradiation of the radiations. In the formula I, R1 denotes an alkyl group or aryl group of m valency; R2 denotes an imino group, phenyl group, biphenyl group, naphthyl group; m denotes 1 to 6 integer. In the formula II, R3 denotes an alkyl group, phenyl group, biphenyl group; R4 denotes an imino group of n valency, alkyl group or aryl group; n denotes 1 to 6 integer. The sensitivity, resolution and dry etching resistance are improved in this way. |
