发明名称 Semiconductor module with number of semiconductor devices - has devices field screen insulated and separated and formed on common semiconductor substrate
摘要 The semiconductor elements (1,3) are mutually insulated and sepd. by a field shield or a field screen (6). The module has a semiconductor substrate (31), on which are formed the semiconductor elements, the field shield (6) on the semiconductor substrate, carrying an insulating film (19), on which is formed a connecting terminal face (20). The face serves for applying an external signal to the semiconductor module. The field shield directly below the terminal face is selectively removed. Pref. the entire substrate surface, including the terminal face is covered by a protective glass layer (21) with an opening (21a) for exposing the terminal face. USE/ADVANTAGE - For integrated circuit memories. Increased integration rate and field shield structure.
申请公布号 DE4011957(A1) 申请公布日期 1991.02.21
申请号 DE19904011957 申请日期 1990.04.12
申请人 MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP 发明人 OOISHI, TSUKASA;MATSUDA, YOSHIO;ARIMOTO, KAZUTAMI;TSUKUDE, MASAKI;FUJISHIMA, KAZUYASU, ITAMI, HYOGO, JP
分类号 H01L21/76;H01L21/60;H01L21/765;H01L23/552;H01L27/108 主分类号 H01L21/76
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