| 摘要 |
<p>PURPOSE:To improve an after-image characteristic by using m-set of lines in common to columns connected in common to n-set of 1st main electrode regions and n-set lines in common to rows connected in common to m-set of control electrode regions in nXm sets of transistors(TRs) in matrix arrangement. CONSTITUTION:A photosensor cell consists of a silicon substrate 1, a PSG film 2, an insulation oxide film 3, an element separation area 4, an n- region (collector region) 5, a p-region (base region) 6, an n+ region (emitter region) 7, a wiring 8, an electrode 9, an n-channel region 11 and an electrode 12. M-set of lines in common to columns connected in common to n-set of 1st main electrode regions and n-set of lines in common to rows connected in common to m-set of control electrode regions are used in nXm sets of TRs in matrix arrangement. Thus, refreshing by n-row each corresponding to readout by n-row is attained. Thus, the after-image characteristic is improved.</p> |
