| 摘要 |
PURPOSE:To improve a field effect transistor of this design in long term reliability by a method wherein a light transmissive conductive film whose main component is prescribed is brought into close contact with a silicon carbide semiconductor layer which forms an N-conductivity type semiconductor that is formed into a source and a drain. CONSTITUTION:In an insulated gate type FET provided with a source and a drain both of N-type conductivity semiconductor, the semiconductor concerned is formed of a two-layered structure composed of a silicon non-single crystal semiconductor layer and a silicon carbide semiconductor SixC1-x layer, where X is so set to satisfy a formula, 0<x<1. When a light transmissive conductive film whose main component is indium oxide is brought into close contact with the silicon carbide semiconductor layer, as silicon carbide has a blocking effect on oxygen, insulator is prevented from being generated at an interface, in result the close contact part is possessed to excellent ohmic resistance and a FET of this design can be enhanced in long-term reliability. |
