| 摘要 |
A continuous film, e.g. of polymeric or metallic material, is produced on a substrate 35 in an evacuated chamber 3, e.g. at 10-6 Torr, by directing a stream of evaporated material from a source 15 on to the surface of the substrate 35 and, prior to deposition on the surface, passing the stream through an electron beam generated by a gun 27 so as to create ions which act as nucleation sites when upon the substrate surface, the degree of ionization of the stream being controlled to produce sufficient nucleation sites to cause substantially all the evaporant material directed on to the substrate to enter into forming the deposited film. The evaporation source 15, which may be bisphenol-A-epichlorohydrin, silicone oil or a metal, is heated by a resistance <PICT:1092744/C6-C7/1> heater and the evaporated material directed by a cylindrical baffle 25 of insulating material. The electron gun 27 within a metallic shield 37 comprises an anode 29, filament 31 and grid 33. A wire mesh 39 connected to a substrate holder 45 ensures a free field space over the substrate 35. A movable shutter 41 is displaced to expose the substrate only during the deposition process. 43 is a pattern defining mask. Substrate holder 45 is biased positively and reduces the risk of reevaporation. By adjusting the temperature of the source 15 and density of the electron beam the proportion of ionized to unionized material can be adjusted. As shown substrate 35 is a conductive thin film insulated from substrate holder 45 by a previously deposited polymeric film 35'. The process may be employed in making the gate conductor of a cryotron. |
