Process for growing compound semiconductor layers and detector using such layers.

摘要

A method of growing a ternary or quaternary compound semiconductor layer, including:- exposing in an enclosure (a) an initial layer comprising at least two of the elements of the compound semiconductor, and (b) a source comprising all the elements of the compound semiconductor and having the composition of an off-stoichiometric melt, heating the initial layer and the source, in the enclosure, to place them in a three-phase equilibrium condition, to grow the compound semiconductor layer on/from the initial layer, vapours from the source being transported to the initial layer. A sensing device using a compound semiconductor layer.