| 摘要 |
PURPOSE:To form minute holes not to be polluted by impurities by a method wherein the P doped oxide film as an interlayer insulating film is covered with the poly Si mask to each the connecting holes. CONSTITUTION:A poly Si thin layer 32 is laminated on an insulating film 22 on a substrate provided with a diffused layer 12 and provided with a resist mask 42 to perforate said layer 32 without undercut. The resist 42 is removed and then the P doped oxide film 22 as the insulating film is etched by means of the parallel flat plate type unit using C2F6 and CHF3. With the resultant accumulation removed by means of reducing to ashes using O2 plasma, the required connecting holes 52 are formed. Through the constitution, the minute connecting holes 12 may be formed and the diffused layer 12 and others are not polluted by the Si film 22, because the poly Si film 22 is thin to be minutely perforated by means of the dry etching and said insulating film 22 is further dry-etched by the parallel flat plate type unit making use of the poly Si as the masking material. |
