| 摘要 |
PURPOSE:To secure the diffusion preventive effect for obtaining the high thermal resistance by a method wherein the dopant diffusion preventive layers exceeding two layers are laid between a p type semiconductor layer and an i type semiconductor layer. CONSTITUTION:A transparent electrode 2, a p type semiconductor layer 3, an interface layer 4 as a diffusion preventive layer, an i type semiconductor layer 7, an n type semiconductor layer 8 and a rear surface electrode 9 are successively lamination-formed on a translucent substrate such as glass. Next, the diffusion preventive layers exceeding two layers are provided between the p type semiconductor layer 3 and the i type semiconductor layer 7. That is, the interface layer 4 is composed of superlattice structure provided with multiple SiN layers, etc. Through these procedures, sufficient diffusion preventive effect on a dopant such as boron, etc., can be achieved to enhance the thermal stability. |
