| 摘要 |
<p>PURPOSE:To prevent the generation of disconnection or peeling, etc., in an etching stage by forming protective films via at least one layer of insulating films on scanning lines for supplying scanning signals. CONSTITUTION:The etching of an a-Si(i) layer and a-Si(n<+>) layer deposited on the insulating film 5 is simultaneously executed in order to form a semiconductor layer and contact layer. Upper gate wirings 3, anodically oxidized film 4, a gate insulating film 5, the protective layer 33a of the 1st gate wiring consisting of the a-Si(i) layer, the protective layer 33b of the 2nd gate wiring consisting of a-Si(n<+>) eventually exist above the lower gate wiring 2 consisting of an Mo metal in the etching stage. A wiring 30 for an upper capacity, the anodically oxidized film 4, the gate insulating film 5, and the protective layers 34a, 34b for the capacitive wirings exist similarly above the wiring 29 for the lower capacitor. Since the many layers are superposed on each other in such a manner, the lower gate wiring 2 and the wiring 29 for the lower capacitor are not easily attacked even if a pinhole exist in these layers.</p> |
