发明名称 MANUFACTURE OF POSITIVE TEMPERATURE COEFFICIENT SEMICONDUCTOR PORCELAIN
摘要 PURPOSE:To lower a resistivity by a method wherein a mixture composed of an element to form a semiconductor and of barium titanate is baked temporarily in the air to form a barium titanate-based composition, this composition is heat-treated in a neutral atmosphere and/or a reducing atmosphere and is molded, a molded substance is reduced and baked in a neutral atmosphere and/or a reducing atmosphere and a heating and oxidation treatment is executed. CONSTITUTION:A mixture composed of an element to form a semiconductor such as Y, La, Nb or the like and of barium titanate is baked temporarily in the air to form a barium titanate-based semiconductor composition. This composition is heat-treated in a neutral atmosphere and/or a reducing atmosphere; it is crushed, granulated and molded; after that, a molded substance is baked in a neutral atmosphere and/or a reducing atmosphere; after that, a heating and oxidation treatment is executed. Thereby, it is possible to obtain a positive temperature coefficient semiconductor porcelain whose resistivity at room temperature is low and which is provided with an excellent PTC characteristic.
申请公布号 JPH0338803(A) 申请公布日期 1991.02.19
申请号 JP19890175313 申请日期 1989.07.06
申请人 NIPPONDENSO CO LTD 发明人 HORI MAKOTO;OYA YASUHIRO;NARA AKIO;SAWAKE TOSHIKI;NUNOGAKI NAOYA
分类号 C04B35/46;H01C7/02 主分类号 C04B35/46
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