| 摘要 |
PURPOSE:To increase the light emitting output by a method wherein the carrier concentration of an active layer is made higher than that of p type clad layer while respective concentrations are specified. CONSTITUTION:In such a structure wherein a double hetero-structure i.e., an active layer 3 in AlAs mixed crystal ratio of around 0.35 is held between a p type clad layer 2 and n type clad layer 4 in AlAs mixed crystal ratio of 0.60-0.85, the carrier concentration of the active layer 3 is changed from 5X10<17>cm<-3> to 1.5X10<18>cm<-3> while the carrier concentration of the p type clad layer 2 is changed from 1.0X10<17>cm<-3> to 1.0X10<18>cm<-3>. Furthermore, the carrier concentration of the active layer 3 is made higher than that of the p type active layer 2. Through these procedures, the light emitting output can be increased. |
